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APTC80A15SCTG
Phase leg Serie & SiC parallel diodes Super Junction MOSFET Power Module
NT C2 VBUS Q1
VDSS = 800V RDSon = 150m max @ Tj = 25C ID = 28A @ Tc = 25C
Application * Motor control * Switched Mode Power Supplies * Uninterruptible Power Supplies Features *
G1 OUT S1 Q2
*
Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated
G2
0/VBU S S2 NT C1
Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration
* * * *
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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1-7
APTC80A15SCTG - Rev 2
Benefits * Outstanding performance at high frequency operation OUT 0/ VBUS * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance S1 NTC2 S2 * Solderable terminals both for power and signal for G1 G2 NTC1 easy PCB mounting * Low profile * RoHS Compliant Absolute maximum ratings Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 800 V Tc = 25C 28 ID Continuous Drain Current A Tc = 80C 21 IDM Pulsed Drain current 112 VGS Gate - Source Voltage 30 V RDSon Drain - Source ON Resistance 150 m PD Maximum Power Dissipation Tc = 25C 277 W IAR Avalanche current (repetitive and non repetitive) 17 A EAR Repetitive Avalanche Energy 0.5 mJ EAS Single Pulse Avalanche Energy 670
VBUS
OUT
July, 2006
APTC80A15SCTG
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current
VGS = 0V,VDS = 800V VGS = 0V,VDS = 800V
Typ
Tj = 25C Tj = 125C 2.1 3
VGS = 10V, ID = 14A VGS = VDS, ID = 2mA VGS = 20 V, VDS = 0V
Max 50 375 150 3.9 150
Unit A m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 400V ID = 28A Inductive switching @125C VGS = 15V VBus = 533V ID = 28A R G = 2.5 Inductive switching @ 25C VGS = 15V, VBus = 533V ID = 28A, R G = 2.5 Inductive switching @ 125C VGS = 15V, VBus = 533V ID = 28A, R G = 2.5
Min
Typ 4507 2092 108 180 22 90 10 13 83 35 291 278 510 342
Max
Unit pF
nC
ns
J J
Series diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage
Test Conditions VR=200V IF = 30A IF = 60A IF = 30A IF = 30A VR = 133V di/dt = 200A/s Tj = 25C Tj = 125C Tc = 85C
Min 200
Typ
Max 250 500
Unit V A A
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
Tj = 25C Tj = 125C Tj = 25C Tj = 125C
24 48 33 150
ns nC
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2-7
APTC80A15SCTG - Rev 2
July, 2006
Tj = 125C
30 1.1 1.4 0.9
1.15 V
APTC80A15SCTG
Parallel diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF QC Q Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Total Capacitive Charge Total Capacitance IF = 15A Test Conditions VR=1200V Tj = 25C Tj = 175C Tc = 125C Tj = 25C Tj = 175C Min 1200 Typ 150 300 15 1.6 2.6 42 135 99 Min Transistor Series diode 2500 -40 -40 -40 2.5 Typ Max 0.45 1.2 1.0 150 125 100 4.7 160 Typ 50 3952 Max Max 600 3000 1.8 3.0 Unit V A A V nC pF
IF = 15A, VR = 600V di/dt =1000A/s f = 1MHz, VR = 200V f = 1MHz, VR = 400V
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance
Unit
C/W
Parallel diode RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
V C N.m g Unit k K
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight
To Heatsink
M5
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K Min
RT =
R 25
SP4 Package outline (dimensions in mm)
1 1 RT : Thermistor value at T exp B 25 / 85 T - T 25
T: Thermistor temperature
AL L DIME NSIONS MARKE D " * " A RE TOLERENCED AS :
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
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3-7
APTC80A15SCTG - Rev 2
July, 2006
APTC80A15SCTG
Typical CoolMOS Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.5 0.45 0.9 0.4 0.35 0.7 0.3 0.5 0.25 0.2 0.3 0.15 0.1 0.1 Single Pulse 0.05 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 80 70 ID, Drain Current (A) 60 50 40 30 20 10 0 0 5 10 15 20 25 VDS , Drain to Source Voltage (V) RDS(on) vs Drain Current 1.4 1.3 1.2 1.1 1 0.9 0.8 0 10 20 30 40 I D, Drain Current (A) 50 60
VGS=20V
Thermal Impedance (C/W)
10
Transfert Characteristics 100
V DS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle T J=-55C
VGS =15&10V
6V 5.5V 5V 4.5V 4V
ID, Drain Current (A)
6.5V
80 60 40 20
T J=125C TJ =25C T J=125C TJ =-55C
0 0
1 2 3 4 5 6 7 8 VGS, Gate to Source Voltage (V)
RDS(on) Drain to Source ON Resistance
DC Drain Current vs Case Temperature 30 I D, DC Drain Current (A)
Normalized to V GS=10V @ 14A
VGS=10V
25 20 15 10 5 0 25 50 75 100 125 150
July, 2006 4-7 APTC80A15SCTG - Rev 2
TC, Case Temperature (C)
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APTC80A15SCTG
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 -50 0 50 100 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 -50 0 50 100 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) 1000 ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 0 50 100 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
V GS=10V ID= 14A
100
limited by RDSon
100s
10 Single pulse TJ =150C TC=25C 1
1ms
1
100ms
0 10 100 1000 VDS, Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
Gate Charge vs Gate to Source Voltage 16 14 12 10 8 6 4 2 0 0 40 80 120 160 200 Gate Charge (nC)
July, 2006
VDS=640V ID=28A T J=25C V DS =160V VDS=400V
10000
Ciss Coss Crss
1000
100
10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
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5-7
APTC80A15SCTG - Rev 2
APTC80A15SCTG
Delay Times vs Current Rise and Fall times vs Current
100
t d(off) td(on) and td(off) (ns)
50 40
t r and tf (ns)
V DS=533V RG=2.5 T J=125C L=100H
tf
80 60 40 20 0 10 20 30 40 I D, Drain Current (A)
Switching Energy vs Current
30 20 10 0
VDS=533V RG=2.5 T J=125C L=100H
tr
t d(on)
50
10
20 30 40 I D, Drain Current (A)
50
Switching Energy vs Gate Resistance
900 750
Eon and Eoff (J)
Switching Energy (J)
600 450 300 150 0
VDS=533V RG=2.5 T J=125C L=100H
2500 Eon 2000 1500 1000 500
V DS=533V ID=28A T J=125C L=100H
Eoff
Eoff
Eon Eoff
0 10 20 30 40 ID, Drain Current (A) 50 0 5 10 15 20 Gate Resistance (Ohms) 25
Operating Frequency vs Drain Current
350
Frequency (kHz)
300 250 200 150 100 50 0 6 8 10 12 14 16 18 20 22 24 26 ID, Drain Current (A)
VDS=533V D=50% RG=2.5 T J=125C T J=75C ZCS ZVS
IDR , Reverse Drain Current (A)
400
Source to Drain Diode Forward Voltage 1000
100
T J=150C
10
T J=25C
Hard Switching
1 0.2
0.6 1 1.4 1.8 VSD, Source to Drain Voltage (V)
July, 2006
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6-7
APTC80A15SCTG - Rev 2
APTC80A15SCTG
Typical SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.2 Thermal Impedance (C/W) 1 0.8 0.6 0.4 0.2 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse
0 0.00001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds) Forward Characteristics
TJ=25C
Reverse Characteristics
30
I F Forward Current (A)
600
IR Reverse Current (A)
25 20 15 10 5 0 0 0.5 1 1.5 2 2.5 3 3.5
VF Forward Voltage (V) Capacitance vs.Reverse Voltage
T J=175C T J=125C TJ=75C
450 300 150 0 400
T J=75C T J=125C T J=175C T J=25C
600
800 1000 1200 1400 1600 VR Reverse Voltage (V)
1200 C, Capacitance (pF) 1000 800 600 400 200 0 1
July, 2006 APTC80A15SCTG - Rev 2
10 100 VR Reverse Voltage
1000
"COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG". Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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